Silicon NPN Transistor
High frequency amplifier applications.

The 2SC2999 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as Low Noise RF amplifier applications.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 25V
Collector-Emitter Voltage, VCEO 20V
Emitter-Base Voltage, VEBO 3V
Collector Current, IC 30mA
Total Device Dissipation (TA = +25C), PD 150mW
Operating Junction Temperature, TJ +125C
Storage Temperature Range, Tstg -40 to +125C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA 40 - 200  
Power Gain PG VCE = 6V, IC = 1mA, f = 100MHz - 28 - dB
Gain-Bandwidth Product fT IC = 5mA, VCE = 10V, f = 100MHz 450 750 - MHz
Noise Figure NF IC = 1mA, VCB = 6V, f = 100MHz - 2,2 - dB

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