Silicon NPN Transistor
High frequency applications.

The 2SC2839 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package.


Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector-Base Voltage, VCBO 30V
Collector-Emitter Voltage, VCEO 20V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 30mA
Total Device Dissipation (TA = +25C), PD 150mW
Operating Junction Temperature, TJ +125C
Storage Temperature Range, Tstg -55 to +125C

Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE = 6V, IC = 1mA 60 - 320  
Gain-Bandwidth Product fT IC = 1mA, VCE = 6V 200 320 - MHz
Power Gain PG VCE = 6V, IC = 1mA, f = 100MHz - 25 - dB
Noise Figure NF IC = 1mA, VCB = 6V, f = 100MHz - 3 - dB

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